Crystal Growth of the Perovskite Semiconductor CsPbBr3: A New Material for High-Energy Radiation Detection

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dc.contributor.authorArief C, Wibowo
dc.contributor.authorStoumpos, Constantinos C.
dc.contributor.authorMalliakas, Christos D.
dc.contributor.authorETAL..
dc.date.accessioned2022-01-08T14:31:02Z
dc.date.accessioned2023-08-19T09:06:05Z
dc.date.available2022-01-08T14:31:02Z
dc.date.available2023-08-19T09:06:05Z
dc.date.issued2013-07
dc.descriptionThe synthesis, crystal growth, and structural and optoelectronic characterization has been carried out for the perovskite compound CsPbBr3. This compound is a direct band gap semiconductor which meets most of the requirements for successful detection of X- and γ-ray radiation, such as high attenuation, high resistivity, and significant photoconductivity response, with detector resolution comparable to that of commercial, state-of-the-art materials. A structural phase transition which occurs during crystal growth at higher temperature does not seem to affect its crystal quality. Its μτ product for both hole and electron carriers is approximately equal. The μτ product for electrons is comparaen_US
dc.description.abstractThe synthesis, crystal growth, and structural and optoelectronic characterization has been carried out for the perovskite compound CsPbBr3. This compound is a direct band gap semiconductor which meets most of the requirements for successful detection of X- and γ-ray radiation, such as high attenuation, high resistivity, and significant photoconductivity response, with detector resolution comparable to that of commercial, state-of-the-art materials. A structural phase transition which occurs during crystal growth at higher temperature does not seem to affect its crystal quality. Its μτ product for both hole and electron carriers is approximately equal. The μτ product for electrons is comparable to cadmium zinc telluride (CZT) and that for holes is 10 times higher than CZT.en_US
dc.identifier.citationStoumpos, C. C., Malliakas, C. D., Peters, J. A., Liu, Z., Sebastian, M., Im, J., ... & Kanatzidis, M. G. (2013). Crystal growth of the perovskite semiconductor CsPbBr3: a new material for high-energy radiation detection. Crystal growth & design, 13(7), 2722-2727.en_US
dc.identifier.doihttps://doi.org/10.1021/cg400645t
dc.identifier.urihttps://edms.wexl.in/handle/1/2199
dc.language.isoenen_US
dc.publisherAmerican Chemical Societyen_US
dc.subjectDetectors operatingen_US
dc.subjectAdvantages over CZTen_US
dc.subjectSemiconductors are materialsen_US
dc.titleCrystal Growth of the Perovskite Semiconductor CsPbBr3: A New Material for High-Energy Radiation Detectionen_US
dc.title.alternativeCrystal growth & designen_US
dc.typeArticleen_US

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