On Chaos and Complexity Analysis for a New Sine-Based Memristor Map with Commensurate and Incommensurate Fractional Orders
| dc.contributor.author | Salameh, Wael | |
| dc.contributor.author | Hamadneh, Tareq | |
| dc.contributor.author | Abbes, Abderrahmane | |
| dc.contributor.author | ETAL.. | |
| dc.date.accessioned | 2024-05-24T07:31:29Z | |
| dc.date.available | 2024-05-24T07:31:29Z | |
| dc.date.issued | 2023-10-16 | |
| dc.description | A memory resistor, commonly known as a “memristor”, has been widely recognized as a fourth fundamental circuit element that serves as a link between charge and magnetic flux. The theoretical concept of the memristor was initially forwarded by Chua in 1971 [1]. For an extended period, Memristor research remained primarily theoretical until the first physical implementation of a memristor was achieved by HP laboratories in 2008. They successfully developed the first practical memristor using nanomaterials [2]. It has since become an essential component in various applications due to its unique properties and potential to revolutionize memory and computing technologies. Memristors have garnered significant attention and research interest, contributing to advancements in various fields, including electronics [3], computing [4], nonvolatile memory [5], and neuromorphic systems [6]. | |
| dc.description.abstract | In this study, we expand a 2D sine map via adding the discrete memristor to introduce a new 3D fractional-order sine-based memristor map. Under commensurate and incommensurate orders, we conduct an extensive exploration and analysis of its nonlinear dynamic behaviors, employing diverse numerical techniques, such as analyzing Lyapunov exponents, visualizing phase portraits, and plotting bifurcation diagrams. The results emphasize the sine-based memristor map’s sensitivity to fractional-order parameters, resulting in the emergence of distinct and diverse dynamic patterns. In addition, we employ the sample entropy (𝑆𝑎𝑚𝑝𝐸𝑛) method and 𝐶0 complexity to quantitatively measure complexity, and we also utilize the 0–1 test to validate the presence of chaos in the proposed fractional-order sine-based memristor map. Finally, MATLAB simulations are be executed to confirm the results provided. Keywords: Chaos, Sine Memristor Map, Discrete Fractional Calculus, Complexity | |
| dc.identifier.citation | Hamadneh, T., Abbes, A., Al-Tarawneh, H., Gharib, G. M., Salameh, W. M. M., Al Soudi, M. S., & Ouannas, A. (2023). On chaos and complexity analysis for a new sine-based memristor map with commensurate and incommensurate fractional orders. Mathematics, 11(20), 4308. | |
| dc.identifier.doi | https://doi.org/10.3390/math11204308 | |
| dc.identifier.uri | https://dspace.adu.ac.ae/handle/1/5411 | |
| dc.language.iso | en | |
| dc.publisher | MDPI | |
| dc.title | On Chaos and Complexity Analysis for a New Sine-Based Memristor Map with Commensurate and Incommensurate Fractional Orders | |
| dc.type | Article |
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